FQP7P06

POWER FIELD-EFFECT TRANSISTOR, 7

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Specifications
Part Number:FQP7P06
Manufacturer:Fairchild (onsemi)
Description:POWER FIELD-EFFECT TRANSISTOR, 7
Nkesp Part Number:73D-FQP7P06
Part Status23509 pcs
Manufacturer:Fairchild (onsemi)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:QFET®
Rds On (Max) @ Id, Vgs:410mOhm @ 3.5A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)

In stock: 23509 pcs

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Product Comparison

Part Number FQP7P06
FQP7P06
FQP7P20
FQP7P20
FQP7N65C
FQP7N65C
FQP7N80
FQP7N80
ManufacturerFairchild SemiconductorFairchild SemiconductoronsemiFairchild Semiconductor
Supplier Device PackageTO-220-3TO-220-3TO-220-3TO-220-3
Drain to Source Voltage (Vdss)60 V200 V650 V800 V
Rds On (Max) @ Id, Vgs410mOhm @ 3.5A, 10V690mOhm @ 3.65A, 10V1.4Ohm @ 3.5A, 10V1.5Ohm @ 3.3A, 10V
FET TypeP-ChannelP-ChannelN-ChannelN-Channel
Vgs (Max)±25V±30V±30V±30V
Vgs(th) (Max) @ Id4V @ 250µA5V @ 250µA4V @ 250µA5V @ 250µA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Current - Continuous Drain (Id) @ 25°C7A (Tc)7.3A (Tc)7A (Tc)6.6A (Tc)
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V25 nC @ 10 V36 nC @ 10 V52 nC @ 10 V
PackageBulkTubeTubeTube
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Input Capacitance (Ciss) (Max) @ Vds295 pF @ 25 V770 pF @ 25 V1245 pF @ 25 V1850 pF @ 25 V
Power Dissipation (Max)45W (Tc)90W (Tc)160W (Tc)167W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesQFET®QFET®QFET®QFET®

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