FQD19N10TF

MOSFET N-CH 100V 15.6A DPAK

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RFQ
Specifications
Part Number:FQD19N10TF
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 100V 15.6A DPAK
Nkesp Part Number:73D-FQD19N10TF
Part Status3659 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:QFET®
Rds On (Max) @ Id, Vgs:100mOhm @ 7.8A, 10V
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15.6A (Tc)
Base Product Number:FQD1
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In stock: 3659 pcs

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Product Comparison

Part Number FQD19N10TF
FQD19N10TF
FQD1N50TM
FQD1N50TM
FQD19N10LTF
FQD19N10LTF
FQD18N20V2TM
FQD18N20V2TM
Manufactureronsemionsemionsemionsemi
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V5.5 nC @ 10 V18 nC @ 5 V26 nC @ 10 V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)2.5W (Ta), 25W (Tc)2.5W (Ta), 50W (Tc)2.5W (Ta), 83W (Tc)
Base Product NumberFQD1FQD1FQD1FQD18N20
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)10V10V5V, 10V10V
Drain to Source Voltage (Vdss)100 V500 V100 V200 V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs100mOhm @ 7.8A, 10V9Ohm @ 550mA, 10V100mOhm @ 7.8A, 10V140mOhm @ 7.5A, 10V
Supplier Device PackageTO-252AATO-252AATO-252AATO-252AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)1.1A (Tc)15.6A (Tc)15A (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesQFET®QFET®QFET®QFET®
Vgs(th) (Max) @ Id4V @ 250µA5V @ 250µA2V @ 250µA5V @ 250µA
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 25 V150 pF @ 25 V870 pF @ 25 V1080 pF @ 25 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs (Max)±25V±30V±20V±30V

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