FQB34P10TM-F085

MOSFET P-CH 100V 33.5A D2PAK

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Specifications
Part Number:FQB34P10TM-F085
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET P-CH 100V 33.5A D2PAK
RoHs Status:
Nkesp Part Number:73D-FQB34P10TM-F085
Part Status4651 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:Automotive, AEC-Q101, QFET®
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Base Product Number:FQB34P10
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In stock: 4651 pcs

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Product Comparison

Part Number FQB34P10TM-F085
FQB34P10TM-F085
FQB32N12V2TM
FQB32N12V2TM
FQB32N20CTM
FQB32N20CTM
FQB33N10LTM
FQB33N10LTM
Manufactureronsemionsemionsemionsemi
Power Dissipation (Max)3.75W (Ta), 155W (Tc)3.75W (Ta), 150W (Tc)3.13W (Ta), 156W (Tc)3.75W (Ta), 127W (Tc)
Supplier Device PackageD²PAK (TO-263)D²PAK (TO-263)D²PAK (TO-263)D²PAK (TO-263)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA2V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V53 nC @ 10 V110 nC @ 10 V40 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V5V, 10V
Vgs (Max)±25V±30V±30V±20V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Base Product NumberFQB34P10FQB3FQB3FQB33N10
FET Feature----
Rds On (Max) @ Id, Vgs60mOhm @ 16.75A, 10V50mOhm @ 16A, 10V82mOhm @ 14A, 10V52mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C33.5A (Tc)32A (Tc)28A (Tc)33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2910 pF @ 25 V1860 pF @ 25 V2220 pF @ 25 V1630 pF @ 25 V
Drain to Source Voltage (Vdss)100 V120 V200 V100 V
SeriesAutomotive, AEC-Q101, QFET®QFET®QFET®QFET®
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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