FDY4000CZ

MOSFET N/P-CH 20V SOT563F

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Specifications
Part Number:FDY4000CZ
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N/P-CH 20V SOT563F
RoHs Status:
Nkesp Part Number:73D-FDY4000CZ
Part Status90005 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:1.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-563F
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:700mOhm @ 600mA, 4.5V
Power - Max:446mW
Package / Case:SOT-563, SOT-666
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:60pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.1nC @ 4.5V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:600mA, 350mA
Configuration:N and P-Channel
Base Product Number:FDY4000
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In stock: 90005 pcs

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Data sheet

Product Comparison

Part Number FDY4000CZ
FDY4000CZ
FDY3000NZ
FDY3000NZ
FDY4001CZ
FDY4001CZ
FDY2001PZ
FDY2001PZ
ManufactureronsemiFairchild SemiconductorFairchild Semiconductoronsemi
PackageTape & Reel (TR)BulkBulkTape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds60pF @ 10V60pF @ 10V60pF @ 10V100pF @ 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 4.5V700mOhm @ 600mA, 4.5V5Ohm @ 200mA, 4.5V8Ohm @ 150mA, 4.5V
Base Product NumberFDY4000FDY3000FDY40FDY20
Gate Charge (Qg) (Max) @ Vgs1.1nC @ 4.5V1.1nC @ 4.5V1.1nC @ 4.5V1.4nC @ 4.5V
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
ConfigurationN and P-Channel2 N-Channel (Dual)N and P-Channel2 P-Channel (Dual)
Supplier Device PackageSOT-563FSOT-563FSOT-563FSOT-563F
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C600mA, 350mA600mA200mA, 150mA150mA
Drain to Source Voltage (Vdss)20V20V20V20V
Power - Max446mW446mW446mW446mW
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET FeatureLogic Level GateLogic Level GateLogic Level GateLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA1.3V @ 250µA1.5V @ 250µA1.5V @ 250µA

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