FDU8876

MOSFET N-CH 30V 15A/73A IPAK

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Specifications
Part Number:FDU8876
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 30V 15A/73A IPAK
Nkesp Part Number:73D-FDU8876
Part Status4279 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:8.2mOhm @ 35A, 10V
Power Dissipation (Max):70W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 73A (Tc)
Base Product Number:FDU88
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In stock: 4279 pcs

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Data sheet

Product Comparison

Part Number FDU8876
FDU8876
FDU8796_F071
FDU8796_F071
FDU8896_NL
FDU8896_NL
FDU8878
FDU8878
ManufactureronsemionsemiFairchild SemiconductorFairchild Semiconductor
Supplier Device PackageI-PAKI-PAKI-PAKI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max)70W (Tc)88W (Tc)80W (Tc)40W (Tc)
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V52 nC @ 10 V60 nC @ 10 V26 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
PackageTubeTubeBulkTube
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Base Product NumberFDU88FDU87--
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Drain to Source Voltage (Vdss)30 V25 V30 V30 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs8.2mOhm @ 35A, 10V5.7mOhm @ 35A, 10V5.7mOhm @ 35A, 10V15mOhm @ 35A, 10V
Vgs (Max)±20V±20V±20V±20V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 73A (Tc)35A (Tc)17A (Ta), 94A (Tc)11A (Ta), 40A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 15 V2610 pF @ 13 V2525 pF @ 15 V880 pF @ 15 V

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