FDU8780_F071

MOSFET N-CH 25V 35A IPAK

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Specifications
Part Number:FDU8780_F071
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 25V 35A IPAK
Nkesp Part Number:73D-FDU8780_F071
Part Status4005 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:8.5mOhm @ 35A, 10V
Power Dissipation (Max):50W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Base Product Number:FDU87
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In stock: 4005 pcs

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Data sheet

Product Comparison

Part Number FDU8780_F071
FDU8780_F071
FDU8796
FDU8796
FDU8770
FDU8770
FDU8796_F071
FDU8796_F071
Manufactureronsemionsemionsemionsemi
FET Feature----
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Drain to Source Voltage (Vdss)25 V25 V25 V25 V
Rds On (Max) @ Id, Vgs8.5mOhm @ 35A, 10V5.7mOhm @ 35A, 10V4mOhm @ 35A, 10V5.7mOhm @ 35A, 10V
Supplier Device PackageI-PAKI-PAKI-PAKI-PAK
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 13 V2610 pF @ 13 V3720 pF @ 13 V2610 pF @ 13 V
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Current - Continuous Drain (Id) @ 25°C35A (Tc)35A (Tc)35A (Tc)35A (Tc)
Power Dissipation (Max)50W (Tc)88W (Tc)115W (Tc)88W (Tc)
Base Product NumberFDU87FDU87FDU87FDU87
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V52 nC @ 10 V73 nC @ 10 V52 nC @ 10 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTubeTubeTubeTube
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs (Max)±20V±20V±20V±20V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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