FDT3612

POWER FIELD-EFFECT TRANSISTOR, 3

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Specifications
Part Number:FDT3612
Manufacturer:Fairchild Semiconductor
Description:POWER FIELD-EFFECT TRANSISTOR, 3
Nkesp Part Number:73D-FDT3612
Part Status3429 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-223-4
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:120mOhm @ 3.7A, 10V
Power Dissipation (Max):3W (Ta)
Package / Case:TO-261-4, TO-261AA
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:632 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)

In stock: 3429 pcs

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Product Comparison

Part Number FDT3612
FDT3612
FDT86102LZ
FDT86102LZ
FDT434P
FDT434P
FDT3612
FDT3612
ManufacturerFairchild Semiconductoronsemionsemionsemi
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
FET TypeN-ChannelN-ChannelP-ChannelN-Channel
Supplier Device PackageSOT-223-4SOT-223-4SOT-223-4SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds632 pF @ 50 V1490 pF @ 50 V1187 pF @ 10 V632 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V25 nC @ 10 V19 nC @ 4.5 V20 nC @ 10 V
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Power Dissipation (Max)3W (Ta)2.2W (Ta)3W (Ta)3W (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 3.7A, 10V28mOhm @ 6.6A, 10V50mOhm @ 6A, 4.5V120mOhm @ 3.7A, 10V
Drain to Source Voltage (Vdss)100 V100 V20 V100 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V4.5V, 10V2.5V, 4.5V6V, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)6.6A (Ta)6A (Ta)3.7A (Ta)
Vgs (Max)±20V±20V±8V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA3V @ 250µA1V @ 250µA4V @ 250µA

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