FDS6894AZ

MOSFET 2N-CH 20V 8A 8SOIC

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Specifications
Part Number:FDS6894AZ
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET 2N-CH 20V 8A 8SOIC
Nkesp Part Number:73D-FDS6894AZ
Part Status4313 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:1.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:17mOhm @ 8A, 4.5V
Power - Max:900mW
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8A
Configuration:2 N-Channel (Dual)
Base Product Number:FDS68
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In stock: 4313 pcs

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Product Comparison

Part Number FDS6894AZ
FDS6894AZ
FDS6898AZ
FDS6898AZ
FDS6898AZ_F085
FDS6898AZ_F085
FDS6900AS
FDS6900AS
ManufactureronsemionsemiFairchild/ON Semiconductoronsemi
Base Product NumberFDS68FDS6898-FDS69
Vgs(th) (Max) @ Id1.5V @ 250µA1.5V @ 250µA14 mOhm @ 9.4A, 4.5V3V @ 250µA
Current - Continuous Drain (Id) @ 25°C8A9.4A20V6.9A, 8.2A
FET FeatureLogic Level GateLogic Level Gate2 N-Channel (Dual)Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds1455pF @ 10V1821pF @ 10V23nC @ 4.5V600pF @ 15V
Drain to Source Voltage (Vdss)20V20VLogic Level Gate30V
PackageTape & Reel (TR)Tape & Reel (TR)-Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)-8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Configuration2 N-Channel (Dual)2 N-Channel (Dual)-2 N-Channel (Dual)
Supplier Device Package8-SOIC8-SOIC-8-SOIC
Rds On (Max) @ Id, Vgs17mOhm @ 8A, 4.5V14mOhm @ 9.4A, 4.5V9.4A27mOhm @ 6.9A, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
SeriesPowerTrench®PowerTrench®Automotive, AEC-Q101, PowerTrench®PowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)-MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V23nC @ 4.5V1.5V @ 250µA15nC @ 10V
Power - Max900mW900mW900mW900mW

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