FDS4465-PG

MOSFET P-CH 20V 8SOIC

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Specifications
Part Number:FDS4465-PG
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET P-CH 20V 8SOIC
Nkesp Part Number:73D-FDS4465-PG
Part Status4402 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max):1.2W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)

In stock: 4402 pcs

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Product Comparison

Part Number FDS4465-PG
FDS4465-PG
FDS4488
FDS4488
FDS4470
FDS4470
FDS4465-G
FDS4465-G
Manufactureronsemionsemionsemionsemi
Operating Temperature-55°C ~ 175°C (TJ)--55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount-Surface MountSurface Mount
Power Dissipation (Max)1.2W (Ta)-2.5W (Ta)1.2W (Ta)
Supplier Device Package8-SOIC-8-SOIC8-SOIC
Rds On (Max) @ Id, Vgs8.5mOhm @ 13.5A, 4.5V-9mOhm @ 12.5A, 10V8.5mOhm @ 13.5A, 4.5V
Vgs (Max)±8V-+30V, -20V±8V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 4.5 V-63 nC @ 10 V120 nC @ 4.5 V
FET Feature----
Package / Case8-SOIC (0.154", 3.90mm Width)-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
FET TypeP-Channel-N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)-12.5A (Ta)13.5A (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA-5V @ 250µA1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V-10V1.8V, 4.5V
TechnologyMOSFET (Metal Oxide)-MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V-40 V20 V
Input Capacitance (Ciss) (Max) @ Vds8237 pF @ 10 V-2659 pF @ 20 V8237 pF @ 10 V

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