FDS3580

SMALL SIGNAL FIELD-EFFECT TRANSI

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RFQ
Specifications
Part Number:FDS3580
Manufacturer:Fairchild (onsemi)
Description:SMALL SIGNAL FIELD-EFFECT TRANSI
Nkesp Part Number:73D-FDS3580
Part Status4077 pcs
Manufacturer:Fairchild (onsemi)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:29mOhm @ 7.6A, 10V
Power Dissipation (Max):2.5W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta)

In stock: 4077 pcs

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Product Comparison

Part Number FDS3580
FDS3580
FDS3612
FDS3612
FDS3670
FDS3670
FDS3512
FDS3512
ManufacturerFairchild SemiconductorFairchild Semiconductoronsemionsemi
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)6V, 10V6V, 10V6V, 10V6V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 7.6A, 10V120mOhm @ 3.4A, 10V32mOhm @ 6.3A, 10V70mOhm @ 4A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V20 nC @ 10 V80 nC @ 10 V18 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta)3.4A (Ta)6.3A (Ta)4A (Ta)
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Vgs (Max)±20V±20V±20V±20V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V632 pF @ 50 V2490 pF @ 50 V634 pF @ 40 V
Power Dissipation (Max)2.5W (Ta)2.5W (Ta)2.5W (Ta)2.5W (Ta)
PackageBulkBulkTape & Reel (TR)Tape & Reel (TR)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Drain to Source Voltage (Vdss)80 V100 V100 V80 V

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