FDMJ1023PZ

MOSFET 2P-CH 20V 2.9A SC75

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Specifications
Part Number:FDMJ1023PZ
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET 2P-CH 20V 2.9A SC75
Nkesp Part Number:73D-FDMJ1023PZ
Part Status4025 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:1V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SC-75, MicroFET
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:112mOhm @ 2.9A, 4.5V
Power - Max:700mW
Package / Case:6-WFDFN Exposed Pad
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.9A
Configuration:2 P-Channel (Dual)
Base Product Number:FDMJ1023
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In stock: 4025 pcs

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Data sheet

Product Comparison

Part Number FDMJ1023PZ
FDMJ1023PZ
FDMQ86530L
FDMQ86530L
FDMS001N025DSD
FDMS001N025DSD
FDML7610AS
FDML7610AS
ManufactureronsemionsemionsemiFairchild Semiconductor
SeriesPowerTrench®GreenBridge™ PowerTrench®PowerTrench®*
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Supplier Device PackageSC-75, MicroFET12-MLP (5x4.5)8-PQFN (5x6)-
Current - Continuous Drain (Id) @ 25°C2.9A8A19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)-
Power - Max700mW1.9W2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)-
Rds On (Max) @ Id, Vgs112mOhm @ 2.9A, 4.5V17.5mOhm @ 8A, 10V3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V-
Package / Case6-WFDFN Exposed Pad12-WDFN Exposed Pad8-PowerWDFN-
Base Product NumberFDMJ1023FDMQ86530FDMS001FDML7610
Configuration2 P-Channel (Dual)4 N-Channel (Half Bridge)2 N-Channel (Dual) Asymmetrical-
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V2295pF @ 30V1370pF @ 13V, 5105pF @ 13V-
FET FeatureLogic Level GateLogic Level Gate--
Mounting TypeSurface MountSurface MountSurface Mount-
Drain to Source Voltage (Vdss)20V60V25V-
Vgs(th) (Max) @ Id1V @ 250µA3V @ 250µA2.5V @ 320µA, 3V @ 1mA-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V33nC @ 10V30nC @ 10V, 104nC @ 10V-

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