FDMA8878

MOSFET N-CH 30V 9A/10A 6MICROFET

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Specifications
Part Number:FDMA8878
Manufacturer:onsemi
Description:MOSFET N-CH 30V 9A/10A 6MICROFET
RoHs Status:
Nkesp Part Number:73D-FDMA8878
Part Status24774 pcs
Manufacturer:onsemi
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-MicroFET (2x2)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:16mOhm @ 9A, 10V
Power Dissipation (Max):2.4W (Ta)
Package / Case:6-WDFN Exposed Pad
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 10A (Tc)
Base Product Number:FDMA88
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In stock: 24774 pcs

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Data sheet

Product Comparison

Part Number FDMA8878
FDMA8878
FDMA8051L
FDMA8051L
FDMA86251
FDMA86251
FDMA8884
FDMA8884
ManufactureronsemionsemionsemiFairchild Semiconductor
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)30 V40 V150 V30 V
Input Capacitance (Ciss) (Max) @ Vds720 pF @ 15 V1260 pF @ 20 V363 pF @ 75 V450 pF @ 15 V
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA4V @ 250µA3V @ 250µA
Supplier Device Package6-MicroFET (2x2)6-MicroFET (2x2)6-MicroFET (2x2)6-MicroFET (2x2)
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Current - Continuous Drain (Id) @ 25°C9A (Ta), 10A (Tc)10A (Tc)2.4A (Ta)6.5A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V6V, 10V4.5V, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Base Product NumberFDMA88FDMA8051FDMA86-
Rds On (Max) @ Id, Vgs16mOhm @ 9A, 10V14mOhm @ 10A, 10V175mOhm @ 2.4A, 10V23mOhm @ 6.5A, 10V
Vgs (Max)±20V±20V±20V±20V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / Case6-WDFN Exposed Pad6-WDFN Exposed Pad6-WDFN Exposed Pad6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V20 nC @ 10 V5.8 nC @ 10 V7.5 nC @ 10 V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)2.4W (Ta)2.4W (Ta)2.4W (Ta)1.9W (Ta)

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