FDFS2P753Z

POWER FIELD-EFFECT TRANSISTOR, 3

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Specifications
Part Number:FDFS2P753Z
Manufacturer:AMI Semiconductor/onsemi
Description:POWER FIELD-EFFECT TRANSISTOR, 3
Nkesp Part Number:73D-FDFS2P753Z
Part Status61660 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:115mOhm @ 3A, 10V
Power Dissipation (Max):1.6W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)

In stock: 61660 pcs

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Product Comparison

Part Number FDFS2P753Z
FDFS2P753Z
FDFS2P106A
FDFS2P106A
FDFS2P102
FDFS2P102
FDFS2P103
FDFS2P103
ManufactureronsemionsemiFairchild Semiconductoronsemi
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current - Continuous Drain (Id) @ 25°C3A (Ta)3A (Ta)3.3A (Ta)5.3A (Ta)
Vgs (Max)±25V±20V±20V±25V
Rds On (Max) @ Id, Vgs115mOhm @ 3A, 10V110mOhm @ 3A, 10V125mOhm @ 3.3A, 10V59mOhm @ 5.3A, 10V
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
FET FeatureSchottky Diode (Isolated)Schottky Diode (Isolated)Schottky Diode (Isolated)Schottky Diode (Isolated)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)30 V60 V20 V30 V
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
SeriesPowerTrench®PowerTrench®-PowerTrench®
PackageBulkTape & Reel (TR)BulkTape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V21 nC @ 10 V10 nC @ 10 V8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds455 pF @ 10 V714 pF @ 30 V270 pF @ 10 V528 pF @ 15 V
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA2V @ 250µA3V @ 250µA
Power Dissipation (Max)1.6W (Ta)900mW (Ta)900mW (Ta)900mW (Ta)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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