FDFMA2P859T

MOSFET P-CH 20V 3A MICROFET

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Specifications
Part Number:FDFMA2P859T
Manufacturer:Fairchild Semiconductor
Description:MOSFET P-CH 20V 3A MICROFET
RoHs Status:
Nkesp Part Number:73D-FDFMA2P859T
Part Status65684 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:1.3V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:MicroFET 2x2 Thin
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 4.5V
Power Dissipation (Max):1.4W (Ta)
Package / Case:6-UDFN Exposed Pad
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)

In stock: 65684 pcs

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Product Comparison

Part Number FDFMA2P859T
FDFMA2P859T
FDFMA2N028Z
FDFMA2N028Z
FDFMA2P859T
FDFMA2P859T
FDFMA2P029Z-F106
FDFMA2P029Z-F106
ManufacturerFairchild Semiconductoronsemionsemionsemi
Drain to Source Voltage (Vdss)20 V20 V20 V20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)3.7A (Ta)3A (Ta)3.1A (Ta)
FET FeatureSchottky Diode (Isolated)Schottky Diode (Isolated)Schottky Diode (Isolated)Schottky Diode (Isolated)
FET TypeP-ChannelN-ChannelP-ChannelP-Channel
Vgs(th) (Max) @ Id1.3V @ 250µA1.5V @ 250µA1.3V @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V6 nC @ 4.5 V6 nC @ 4.5 V10 nC @ 4.5 V
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V68mOhm @ 3.7A, 4.5V120mOhm @ 3A, 4.5V95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 10 V455 pF @ 10 V435 pF @ 10 V720 pF @ 10 V
Vgs (Max)±8V±12V±8V±12V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V2.5V, 4.5V1.8V, 4.5V2.5V, 4.5V
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Supplier Device PackageMicroFET 2x2 Thin6-MicroFET (2x2)MicroFET 2x2 Thin6-MicroFET (2x2)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / Case6-UDFN Exposed Pad6-VDFN Exposed Pad6-UDFN Exposed Pad6-VDFN Exposed Pad
Power Dissipation (Max)1.4W (Ta)1.4W (Tj)1.4W (Ta)1.4W (Ta)
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)

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