FDC2612_F095

MOSFET N-CH 200V 1.1A SUPERSOT6

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RFQ
Specifications
Part Number:FDC2612_F095
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 200V 1.1A SUPERSOT6
Nkesp Part Number:73D-FDC2612_F095
Part Status4297 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SuperSOT™-6
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:725mOhm @ 1.1A, 10V
Power Dissipation (Max):1.6W (Ta)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Base Product Number:FDC2612
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In stock: 4297 pcs

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Data sheet

Product Comparison

Part Number FDC2612_F095
FDC2612_F095
FDC2612
FDC2612
FDC021N30
FDC021N30
FDC2512_F095
FDC2512_F095
Manufactureronsemionsemionsemionsemi
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Base Product NumberFDC2612FDC2612FDC021FDC2512
Supplier Device PackageSuperSOT™-6SuperSOT™-6SuperSOT™-6SuperSOT™-6
Rds On (Max) @ Id, Vgs725mOhm @ 1.1A, 10V725mOhm @ 1.1A, 10V26mOhm @ 6.1A, 10V425mOhm @ 1.4A, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)1.1A (Ta)6.1A (Ta)1.4A (Ta)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Power Dissipation (Max)1.6W (Ta)1.6W (Ta)700mW (Ta)1.6W (Ta)
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)200 V200 V30 V150 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id4.5V @ 250µA4.5V @ 250µA3V @ 250µA4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V6V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds234 pF @ 100 V234 pF @ 100 V710 pF @ 15 V344 pF @ 75 V
Vgs (Max)±20V±20V±20V±20V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V11 nC @ 10 V10.8 nC @ 10 V11 nC @ 10 V

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