FDBL9406-F085HM

MOSFET

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RFQ
Specifications
Part Number:FDBL9406-F085HM
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET
Nkesp Part Number:73D-FDBL9406-F085HM
Part Status4582 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HPSOF
Rds On (Max) @ Id, Vgs:1.2mOhm @ 80A, 10V
Power Dissipation (Max):300W (Tj)
Package / Case:8-PowerSFN
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:7735 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:240A (Tc)

In stock: 4582 pcs

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Product Comparison

Part Number FDBL9406-F085HM
FDBL9406-F085HM
FDBL9401L-F085
FDBL9401L-F085
FDBL86363-F085
FDBL86363-F085
FDBL9406-F085
FDBL9406-F085
ManufactureronsemionsemiFairchild Semiconductoronsemi
FET Feature----
Rds On (Max) @ Id, Vgs1.2mOhm @ 80A, 10V0.55mOhm @ 80A, 10V2mOhm @ 80A, 10V1.2mOhm @ 80A, 10V
Vgs (Max)±20V±20V±20V±20V
Drain to Source Voltage (Vdss)40 V40 V80 V40 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V10V10V
Package / Case8-PowerSFN8-PowerSFN8-PowerSFN8-PowerSFN
Vgs(th) (Max) @ Id4V @ 250µA3V @ 250µA4V @ 250µA4V @ 250µA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)300W (Tj)429W (Tc)357W (Tj)300W (Tj)
Supplier Device Package8-HPSOF8-HPSOF8-HPSOF8-HPSOF
Current - Continuous Drain (Id) @ 25°C240A (Tc)300A (Tc)240A (Tc)240A (Tc)
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V376 nC @ 10 V169 nC @ 10 V107 nC @ 10 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds7735 pF @ 25 V19550 pF @ 20 V10 pF @ 40 V7735 pF @ 25 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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