FDB86135

MOSFET N-CH 100V 75A D2PAK

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RFQ
Specifications
Part Number:FDB86135
Manufacturer:onsemi
Description:MOSFET N-CH 100V 75A D2PAK
RoHs Status:
Nkesp Part Number:73D-FDB86135
Part Status6102 pcs
Manufacturer:onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:3.5mOhm @ 75A, 10V
Power Dissipation (Max):2.4W (Ta), 227W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:7295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Base Product Number:FDB861
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In stock: 6102 pcs

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Product Comparison

Part Number FDB86135
FDB86135
FDB86366-F085
FDB86366-F085
FDB8832-F085
FDB8832-F085
FDB86363-F085
FDB86363-F085
ManufactureronsemionsemiFairchild Semiconductoronsemi
SeriesPowerTrench®Automotive, AEC-Q101, PowerTrench®Automotive, AEC-Q101, PowerTrench®Automotive, AEC-Q101, PowerTrench®
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V112 nC @ 10 V265 nC @ 10 V150 nC @ 10 V
Drain to Source Voltage (Vdss)100 V80 V30 V80 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)110A (Tc)34A (Ta)110A (Tc)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)2.4W (Ta), 227W (Tc)176W (Tj)300W (Tc)300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds7295 pF @ 25 V6280 pF @ 40 V11400 pF @ 15 V10000 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V10V
Supplier Device PackageD²PAK (TO-263)D²PAK (TO-263)D²PAK (TO-263)D²PAK (TO-263)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs3.5mOhm @ 75A, 10V3.6mOhm @ 80A, 10V1.9mOhm @ 80A, 10V2.4mOhm @ 80A, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberFDB861FDB86366-FDB86363
PackageTape & Reel (TR)Tape & Reel (TR)BulkTape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA3V @ 250µA4V @ 250µA
FET Feature----
Vgs (Max)±20V±20V±20V±20V

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