FDB2532

MOSFET N-CH 150V 8A/79A D2PAK

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RFQ
Specifications
Part Number:FDB2532
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 150V 8A/79A D2PAK
RoHs Status:
Nkesp Part Number:73D-FDB2532
Part Status8031 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:16mOhm @ 33A, 10V
Power Dissipation (Max):310W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta), 79A (Tc)
Base Product Number:FDB253
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In stock: 8031 pcs

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Product Comparison

Part Number FDB2532
FDB2532
FDB1D7N10CL7
FDB1D7N10CL7
FDB24AN06LA0
FDB24AN06LA0
FDB2572
FDB2572
ManufactureronsemionsemiFairchild Semiconductoronsemi
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageD²PAK (TO-263)D2PAK (TO-263)D2PAK (TO-263)D²PAK (TO-263)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 700µA3V @ 250µA4V @ 250µA
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
FET Feature----
Base Product NumberFDB253FDB1D7-FDB257
Input Capacitance (Ciss) (Max) @ Vds5870 pF @ 25 V11600 pF @ 50 V1850 pF @ 25 V1770 pF @ 25 V
PackageTape & Reel (TR)Tape & Reel (TR)BulkTape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C8A (Ta), 79A (Tc)268A (Tc)7.8A (Ta), 40A (Tc)4A (Ta), 29A (Tc)
Drain to Source Voltage (Vdss)150 V100 V60 V150 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs (Max)±20V±20V±20V±20V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V6V, 15V5V, 10V6V, 10V
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V163 nC @ 10 V21 nC @ 5 V34 nC @ 10 V
Power Dissipation (Max)310W (Tc)250W (Tc)75W (Tc)135W (Tc)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-7, D²Pak (6 Leads + Tab)TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs16mOhm @ 33A, 10V1.65mOhm @ 100A, 15V19mOhm @ 40A, 10V54mOhm @ 9A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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