FCU850N80Z

MOSFET N-CH 800V 6A IPAK

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Specifications
Part Number:FCU850N80Z
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 800V 6A IPAK
RoHs Status:
Nkesp Part Number:73D-FCU850N80Z
Part Status3644 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4.5V @ 600µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:SuperFET® II
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Power Dissipation (Max):75W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Base Product Number:FCU850
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In stock: 3644 pcs

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Data sheet

Product Comparison

Part Number FCU850N80Z
FCU850N80Z
FCU2250N80Z
FCU2250N80Z
FCU4300N80Z
FCU4300N80Z
FCU5N60TU
FCU5N60TU
ManufactureronsemiFairchild SemiconductorFairchild Semiconductoronsemi
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drain to Source Voltage (Vdss)800 V800 V800 V600 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)2.6A (Tc)1.6A (Tc)4.6A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 3A, 10V2.25Ohm @ 1.3A, 10V4.3Ohm @ 800mA, 10V950mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V14 nC @ 10 V8.8 nC @ 10 V16 nC @ 10 V
PackageTubeBulkBulkTube
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberFCU850--FCU5N60
Power Dissipation (Max)75W (Tc)39W (Tc)27.8W (Tc)54W (Tc)
Supplier Device PackageI-PAKI-PAKI-PAKI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AA
Vgs (Max)±20V±20V±20V±30V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id4.5V @ 600µA4.5V @ 260µA4.5V @ 160µA5V @ 250µA
SeriesSuperFET® IISuperFET® IISuperFET® IISuperFET™
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds1315 pF @ 100 V585 pF @ 100 V355 pF @ 100 V600 pF @ 25 V

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