In stock: 9060 pcs
| Part Number |
FCMT180N65S3
 |
TK8R2E06PL,S1X
 |
FQA28N15_F109
 |
STW48N60M6
 |
|
|---|---|---|---|---|---|
| Manufacturer | onsemi | Toshiba Semiconductor and Storage | onsemi | STMicroelectronics | |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | 50A (Tc) | 33A (Tc) | 39A (Tc) | |
| Drain to Source Voltage (Vdss) | 650 V | 60 V | 150 V | 600 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 28 nC @ 10 V | 52 nC @ 10 V | 57 nC @ 10 V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1.8mA | 2.5V @ 300µA | 4V @ 250µA | 4.75V @ 250µA | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V | 8.2mOhm @ 25A, 10V | 90mOhm @ 16.5A, 10V | 69mOhm @ 19.5A, 10V | |
| Vgs (Max) | ±30V | ±20V | ±25V | ±25V | |
| Supplier Device Package | Power88 | TO-220 | TO-3PN | TO-247-3 | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Series | SuperFET® III | U-MOSIX-H | QFET® | MDmesh™ M6 | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 400 V | 1990 pF @ 30 V | 1600 pF @ 25 V | 2578 pF @ 100 V | |
| FET Feature | - | - | - | - | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package | Tape & Reel (TR) | Tube | Tube | Tube | |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole | |
| Power Dissipation (Max) | 139W (Tc) | 81W (Tc) | 227W (Tc) | 250W (Tc) | |
| Package / Case | 4-PowerTSFN | TO-220-3 | TO-3P-3, SC-65-3 | TO-247-3 | |
| Base Product Number | FCMT180 | - | FQA2 | STW48 | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | 175°C | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
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