EPC2102ENGRT

GANFET 2 N-CHANNEL 60V 23A DIE

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Specifications
Part Number:EPC2102ENGRT
Manufacturer:EPC
Description:GANFET 2 N-CHANNEL 60V 23A DIE
RoHs Status:
Nkesp Part Number:73D-EPC2102ENGRT
Part Status4508 pcs
Manufacturer:EPC
Vgs(th) (Max) @ Id:2.5V @ 7mA
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:4.4mOhm @ 20A, 5V
Power - Max:-
Package / Case:Die
Package:Tape & Reel (TR)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:830pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 5V
FET Feature:-
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:23A (Tj)
Configuration:2 N-Channel (Half Bridge)
Base Product Number:EPC210
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In stock: 4508 pcs

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Data sheet

Product Comparison

Part Number EPC2102ENGRT
EPC2102ENGRT
EPC2104ENG
EPC2104ENG
EPC2101ENGRT
EPC2101ENGRT
EPC2105
EPC2105
ManufacturerEPCEPCEPCEPC
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V7nC @ 5V2.7nC @ 5V2.5nC @ 5V, 10nC @ 5V
FET Feature-GaNFET (Gallium Nitride)--
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)60V100V60V80V
Base Product NumberEPC210-EPC210EPC210
Power - Max----
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 5V6.3 mOhm @ 20A, 5V11.5mOhm @ 20A, 5V14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Configuration2 N-Channel (Half Bridge)-2 N-Channel (Half Bridge)2 N-Channel (Half Bridge)
Package / CaseDieDieDieDie
Vgs(th) (Max) @ Id2.5V @ 7mA2.5V @ 5.5mA2.5V @ 2mA2.5V @ 2.5mA, 2.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds830pF @ 30V800pF @ 50V300pF @ 30V300pF @ 40V, 1100pF @ 40V
Supplier Device PackageDieDieDieDie
TechnologyGaNFET (Gallium Nitride)-GaNFET (Gallium Nitride)GaNFET (Gallium Nitride)
SerieseGaN®eGaN®eGaN®eGaN®
PackageTape & Reel (TR)-Tape & Reel (TR)Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C23A (Tj)23A9.5A, 38A9.5A, 38A

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