E3M0021120K

SIC, MOSFET, 21M, 1200V, TO-247-

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Specifications
Part Number:E3M0021120K
Manufacturer:Wolfspeed
Description:SIC, MOSFET, 21M, 1200V, TO-247-
Nkesp Part Number:73D-E3M0021120K
Part Status38256 pcs
Manufacturer:Wolfspeed
Vgs(th) (Max) @ Id:3.6V @ 17.1mA
Vgs (Max):+19V, -8V
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:TO-247-4L
Series:Automotive, AEC-Q101, E
Rds On (Max) @ Id, Vgs:28.8mOhm @ 62.1A, 15V
Power Dissipation (Max):405W (Tc)
Package / Case:TO-247-4
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs:177 nC @ 15 V
FET Type:N-Channel
Drive Voltage (Max Rds On, Min Rds On):15V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:104A (Tc)
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In stock: 38256 pcs

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Data sheet

Product Comparison

Part Number E3M0021120K
E3M0021120K
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IRFH5255TR2PBF
ManufacturerWolfspeed, Inc.Rohm SemiconductorWolfspeed, Inc.Infineon Technologies
Rds On (Max) @ Id, Vgs28.8mOhm @ 62.1A, 15V1.64mOhm @ 90A, 10V-6mOhm @ 15A, 10V
SeriesAutomotive, AEC-Q101, E---
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
PackageTubeTubeTubeCut Tape (CT)
Vgs (Max)+19V, -8V±20V--
Operating Temperature-55°C ~ 175°C (TJ)150°C (TJ)175°C (TJ)-
Gate Charge (Qg) (Max) @ Vgs177 nC @ 15 V168 nC @ 10 V-14.5 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C104A (Tc)180A (Tc)-15A (Ta), 51A (Tc)
Vgs(th) (Max) @ Id3.6V @ 17.1mA2.5V @ 1mA-2.35V @ 25µA
Drain to Source Voltage (Vdss)1200 V40 V1200 V25 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 1000 V12000 pF @ 20 V-988 pF @ 13 V
Power Dissipation (Max)405W (Tc)125W (Tc)115W-
Drive Voltage (Max Rds On, Min Rds On)15V4.5V, 10V--
FET TypeN-ChannelN-Channel-N-Channel
Package / CaseTO-247-4TO-220-3TO-247-48-PowerVDFN
TechnologySiC (Silicon Carbide Junction Transistor)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)MOSFET (Metal Oxide)
Supplier Device PackageTO-247-4LTO-220ABTO-247-4L8-PQFN (5x6)

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