DMT69M5LCG-7

MOSFET BVDSS: 61V~100V V-DFN3333

Quantity
RFQ
Specifications
Part Number:DMT69M5LCG-7
Manufacturer:Diodes Incorporated
Description:MOSFET BVDSS: 61V~100V V-DFN3333
Nkesp Part Number:73D-DMT69M5LCG-7
Part Status73015 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:V-DFN3333-8 (Type B)
Series:-
Rds On (Max) @ Id, Vgs:8.3mOhm @ 13.5A, 10V
Power Dissipation (Max):1.37W (Ta)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1406 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:28.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:14.6A (Ta), 52.1A (Tc)
Download Details PDF:

In stock: 73015 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Diodes Incorporated
Quantity
QUICK RFQ

Data sheet

Product Comparison

Part Number DMT69M5LCG-7
DMT69M5LCG-7
DMT68M8LPS-13
DMT68M8LPS-13
DMT69M5LFVWQ-13
DMT69M5LFVWQ-13
DMT67M8LCGQ-13
DMT67M8LCGQ-13
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Rds On (Max) @ Id, Vgs8.3mOhm @ 13.5A, 10V7.9mOhm @ 20A, 10V8.3mOhm @ 13.5A, 10V5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C14.6A (Ta), 52.1A (Tc)14.1A (Ta), 69.2A (Tc)14.8A (Ta), 40.6A (Tc)16A (Ta), 64.6A (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1406 pF @ 30 V2078 pF @ 30 V1406 pF @ 30 V2130 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs(th) (Max) @ Id2.5V @ 250µA3V @ 250µA2.5V @ 250µA2.5V @ 250µA
Series--Automotive, AEC-Q101Automotive, AEC-Q101
Package / Case8-PowerVDFN8-PowerTDFN8-PowerVDFN8-PowerVDFN
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)1.37W (Ta)2.4W (Ta), 56.8W (Tc)2.74W (Ta), 20.5W (Tc)900mW (Tc)
Mounting TypeSurface MountSurface MountSurface Mount, Wettable FlankSurface Mount
Gate Charge (Qg) (Max) @ Vgs28.4 nC @ 10 V30 nC @ 10 V28.4 nC @ 10 V37.5 nC @ 10 V
Drain to Source Voltage (Vdss)60 V60 V60 V60 V
Supplier Device PackageV-DFN3333-8 (Type B)PowerDI5060-8PowerDI3333-8 (SWP) Type UXV-DFN3333-8 (Type B)
FET Feature----

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB