DMT67M8LSS-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

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Specifications
Part Number:DMT67M8LSS-13
Manufacturer:Diodes Incorporated
Description:MOSFET BVDSS: 41V~60V SO-8 T&R 2
Nkesp Part Number:73D-DMT67M8LSS-13
Part Status58050 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:-
Rds On (Max) @ Id, Vgs:6.6mOhm @ 16.5A, 10V
Power Dissipation (Max):1.4W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
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In stock: 58050 pcs

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Diodes Incorporated
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Data sheet

Product Comparison

Part Number DMT67M8LSS-13
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ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Series----
Rds On (Max) @ Id, Vgs6.6mOhm @ 16.5A, 10V9.5mOhm @ 13.5A, 10V7mOhm @ 20A, 10V8.3mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V30 nC @ 10 V37.5 nC @ 10 V28.4 nC @ 10 V
Drain to Source Voltage (Vdss)60 V60 V60 V60 V
Vgs (Max)±20V±20V±20V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount, Wettable Flank
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power Dissipation (Max)1.4W (Ta)2.7W (Ta), 41.7W (Tc)3.1W (Ta), 89.3W (Tc)2.74W (Ta), 20.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 30 V2078 pF @ 30 V2130 pF @ 30 V1406 pF @ 30 V
Package / Case8-SOIC (0.154", 3.90mm Width)8-PowerVDFNTO-252-3, DPak (2 Leads + Tab), SC-638-PowerVDFN
Current - Continuous Drain (Id) @ 25°C12A (Ta)54.1A (Tc)87A (Tc)14.8A (Ta), 40.6A (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA2.5V @ 250µA2.5V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device Package8-SOPowerDI3333-8 (Type UX)TO-252, (D-Pak)PowerDI3333-8 (SWP) Type UX

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