DMNH10H028SPSQ-13

MOSFET N-CH 100V 40A PWRDI5060-8

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Specifications
Part Number:DMNH10H028SPSQ-13
Manufacturer:Diodes Incorporated
Description:MOSFET N-CH 100V 40A PWRDI5060-8
RoHs Status:
Nkesp Part Number:73D-DMNH10H028SPSQ-13
Part Status16277 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerDI5060-8
Series:-
Rds On (Max) @ Id, Vgs:28mOhm @ 20A, 10V
Power Dissipation (Max):1.6W (Ta)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Base Product Number:DMNH10
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In stock: 16277 pcs

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Diodes Incorporated
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Data sheet

Product Comparison

Part Number DMNH10H028SPSQ-13
DMNH10H028SPSQ-13
DMNH4005SCTQ
DMNH4005SCTQ
DMNH10H021SPSW-13
DMNH10H021SPSW-13
DMNH3010LK3-13
DMNH3010LK3-13
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Rds On (Max) @ Id, Vgs28mOhm @ 20A, 10V4mOhm @ 20A, 10V28mOhm @ 20A, 10V9.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V48 nC @ 10 V71 nC @ 10 V37 nC @ 10 V
Vgs (Max)±20V20V±20V±20V
Input Capacitance (Ciss) (Max) @ Vds2245 pF @ 50 V2846 pF @ 20 V3789 pF @ 50 V2075 pF @ 15 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C40A (Tc)150A (Tc)58A (Tc)15A (Ta), 55A (Tc)
FET Feature----
Series---Automotive, AEC-Q101
Drain to Source Voltage (Vdss)100 V40 V100 V30 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountThrough HoleSurface Mount, Wettable FlankSurface Mount
Drive Voltage (Max Rds On, Min Rds On)10V10V10V4.5V, 10V
Package / Case8-PowerTDFNTO-220-38-PowerTDFNTO-252-3, DPak (2 Leads + Tab), SC-63
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackagePowerDI5060-8TO-220-3PowerDI5060-8 (Type UX)TO-252-3
Vgs(th) (Max) @ Id4V @ 250µA3V @ 250µA4V @ 250µA2.5V @ 250µA
Power Dissipation (Max)1.6W (Ta)165W (Tc)1.8W2W (Ta)
PackageTape & Reel (TR)TubeTape & Reel (TR)Tape & Reel (TR)
Base Product NumberDMNH10DMNH4005DMNH10DMNH3010

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