DMN6066SSDQ-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

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Specifications
Part Number:DMN6066SSDQ-13
Manufacturer:Diodes Incorporated
Description:MOSFET BVDSS: 41V~60V SO-8 T&R 2
Nkesp Part Number:73D-DMN6066SSDQ-13
Part Status38634 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:3V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:66mOhm @ 4.5A, 10V
Power - Max:1.25W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:502pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:10.3nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Configuration:2 N-Channel (Dual)
Base Product Number:DMN6066
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In stock: 38634 pcs

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Data sheet

Product Comparison

Part Number DMN6066SSDQ-13
DMN6066SSDQ-13
DMN6040SSDQ-13
DMN6040SSDQ-13
DMN6066SSD-13
DMN6066SSD-13
DMN6040SSD-13
DMN6040SSD-13
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
SeriesAutomotive, AEC-Q101Automotive, AEC-Q101--
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)5A (Ta)3.3A5A
Power - Max1.25W (Ta)1.3W1.8W1.3W
Drain to Source Voltage (Vdss)60V60V60V60V
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10.3nC @ 10V22.4nC @ 10V10.3nC @ 10V22.4nC @ 10V
Base Product NumberDMN6066DMN6040DMN6066DMN6040
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package8-SOP8-SO8-SO8-SO
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA3V @ 250µA3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds502pF @ 30V1287pF @ 25V502pF @ 30V1287pF @ 25V
FET Feature--Logic Level GateLogic Level Gate
Rds On (Max) @ Id, Vgs66mOhm @ 4.5A, 10V40mOhm @ 4.5A, 10V66mOhm @ 4.5A, 10V40mOhm @ 4.5A, 10V

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