DMG1013UWQ-7

MOSFET P-CH 20V 820MA SOT323

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Specifications
Part Number:DMG1013UWQ-7
Manufacturer:Diodes Incorporated
Description:MOSFET P-CH 20V 820MA SOT323
RoHs Status:
Nkesp Part Number:73D-DMG1013UWQ-7
Part Status244836 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-323
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:750mOhm @ 430mA, 4.5V
Power Dissipation (Max):310mW (Ta)
Package / Case:SC-70, SOT-323
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs:0.62 nC @ 4.5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:820mA (Ta)
Base Product Number:DMG1013
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In stock: 244836 pcs

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Product Comparison

Part Number DMG1013UWQ-7
DMG1013UWQ-7
DMG1013TQ-7
DMG1013TQ-7
DMG1012T-13
DMG1012T-13
DMG1012TQ-7
DMG1012TQ-7
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Current - Continuous Drain (Id) @ 25°C820mA (Ta)460mA (Ta)630mA (Ta)630mA (Ta)
Rds On (Max) @ Id, Vgs750mOhm @ 430mA, 4.5V700mOhm @ 350mA, 4.5V400mOhm @ 600mA, 4.5V400mOhm @ 600mA, 4.5V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs0.62 nC @ 4.5 V0.58 nC @ 4.5 V0.74 nC @ 4.5 V0.74 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V20 V20 V20 V
Vgs (Max)±6V±6V±6V±6V
Package / CaseSC-70, SOT-323SOT-523SOT-523SOT-523
Supplier Device PackageSOT-323SOT-523SOT-523SOT-523
FET Feature----
Vgs(th) (Max) @ Id1V @ 250µA1V @ 250µA1V @ 250µA1V @ 250µA
SeriesAutomotive, AEC-Q101Automotive, AEC-Q101-Automotive, AEC-Q101
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V1.8V, 4.5V1.8V, 4.5V1.8V, 4.5V
Base Product NumberDMG1013DMG1013DMG1012DMG1012
Power Dissipation (Max)310mW (Ta)270mW (Ta)280mW (Ta)280mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds59.76 pF @ 16 V59.76 pF @ 16 V60.67 pF @ 16 V60.67 pF @ 16 V
FET TypeP-ChannelP-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)

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