CPH3348-TL-E

P-CHANNEL MOSFET

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RFQ
Specifications
Part Number:CPH3348-TL-E
Manufacturer:AMI Semiconductor/onsemi
Description:P-CHANNEL MOSFET
RoHs Status:
Nkesp Part Number:73D-CPH3348-TL-E
Part Status88369 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:-
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:3-CPH
Series:-
Rds On (Max) @ Id, Vgs:70mOhm @ 1.5A, 4.5V
Power Dissipation (Max):1W (Ta)
Package / Case:SC-96
Package:Bulk
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:405 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 4.5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Base Product Number:CPH334

In stock: 88369 pcs

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Product Comparison

Part Number CPH3348-TL-E
CPH3348-TL-E
CPH3341-TL-E
CPH3341-TL-E
CPH3360-TL-H
CPH3360-TL-H
CPH3350-TL-W
CPH3350-TL-W
ManufacturerSanyoonsemionsemionsemi
Supplier Device Package3-CPH3-CPH3-CPH3-CPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V-4V, 10V1.8V, 4.5V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current - Continuous Drain (Id) @ 25°C3A (Ta)5A (Ta)1.6A (Ta)3A (Ta)
Power Dissipation (Max)1W (Ta)1.2W (Ta)900mW (Ta)1W (Ta)
PackageBulkBulkTape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Vgs(th) (Max) @ Id----
Drain to Source Voltage (Vdss)12 V30 V30 V20 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V21.8 nC @ 10 V2.2 nC @ 10 V4.6 nC @ 4.5 V
Vgs (Max)±10V-±20V±10V
Rds On (Max) @ Id, Vgs70mOhm @ 1.5A, 4.5V45mOhm @ 2.5A, 10V303mOhm @ 800mA, 10V83mOhm @ 1.5A, 4.5V
Base Product NumberCPH334-CPH336CPH3350
Package / CaseSC-96SC-96TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 6 V1115 pF @ 10 V82 pF @ 10 V375 pF @ 10 V
Series----
FET Feature----

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