Name: Cambridge GaN Devices CGD65B130S2-T13
Brand: Cambridge GaN Devices
SKU: CGD65B130S2-T13
Price: 2.69 USD
Availability: InStock

Specifications: Part Number:CGD65B130S2-T13; Manufacturer:Cambridge GaN Devices; Description:650V GAN HEMT, 130MOHM, DFN5X6.; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-CGD65B130S2-T13; Part Status7484 pcs

Manufacturer:Cambridge GaN Devices

Vgs(th) (Max) @ Id:4.2V @ 4.2mA

Vgs (Max):+20V, -1V

Technology:GaNFET (Gallium Nitride)

Supplier Device Package:8-DFN (5x6)

Series:ICeGaN™

Rds On (Max) @ Id, Vgs:182mOhm @ 900mA, 12V

Package / Case:8-PowerVDFN

Package:Tape & Reel (TR)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 12 V

FET Type:-

FET Feature:Current Sensing

Drive Voltage (Max Rds On, Min Rds On):9V, 20V

Drain to Source Voltage (Vdss):650 V

Current - Continuous Drain (Id) @ 25°C:12A (Tc)

Download Details PDF:

CGD65B130S2-T13.pdf

In stock: 7484 pcs

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Data sheet

Product Comparison

Part Number	CGD65A130S2-T13	CGD65B200S2-T13	CGD65A055S2-T07	BTS130-E3045A
Manufacturer	Cambridge GaN Devices	Cambridge GaN Devices	Cambridge GaN Devices	Infineon Technologies
Package / Case	-	-	-	-
Package	-	Bulk	Bulk	Bulk
Series	-	*	*	*
Rds On (Max) @ Id, Vgs	-	-	-	-
FET Type	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Supplier Device Package	-	-	-	-
Vgs (Max)	-	-	-	-
Operating Temperature	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Mounting Type	-	-	-	-
Technology	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
FET Feature	-	-	-	-