BUZ77B

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:BUZ77B
Manufacturer:Infineon Technologies
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-BUZ77B
Part Status3219 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:SIPMOS ®
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1.7A, 10V
Power Dissipation (Max):75W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Tc)

In stock: 3219 pcs

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Product Comparison

Part Number BUZ77B
BUZ77B
BUZ73A
BUZ73A
BUZ73LHXKSA1
BUZ73LHXKSA1
BUZ73AL
BUZ73AL
ManufacturerInfineon TechnologiesHarris CorporationInfineon TechnologiesInfineon Technologies
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V5V5V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 25 V530 pF @ 25 V840 pF @ 25 V840 pF @ 25 V
PackageBulkTubeTubeTube
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Vgs(th) (Max) @ Id4V @ 1mA4V @ 1mA2V @ 1mA2V @ 1mA
SeriesSIPMOS ®SIPMOS®SIPMOS®SIPMOS®
Supplier Device PackageTO-220ABPG-TO220-3PG-TO220-3PG-TO220-3
Vgs (Max)±20V±20V±20V±20V
Power Dissipation (Max)75W (Tc)40W (Tc)40W (Tc)40W (Tc)
Current - Continuous Drain (Id) @ 25°C2.9A (Tc)5.5A (Tc)7A (Tc)5.5A (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Rds On (Max) @ Id, Vgs3.5Ohm @ 1.7A, 10V600mOhm @ 4.5A, 10V400mOhm @ 3.5A, 5V600mOhm @ 3.5A, 5V
Drain to Source Voltage (Vdss)600 V200 V200 V200 V

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