BUZ73HXKSA1

MOSFET N-CH 200V 7A TO220-3

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Specifications
Part Number:BUZ73HXKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 200V 7A TO220-3
Nkesp Part Number:73D-BUZ73HXKSA1
Part Status3734 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3
Series:SIPMOS®
Rds On (Max) @ Id, Vgs:400mOhm @ 4.5A, 10V
Power Dissipation (Max):40W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
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In stock: 3734 pcs

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Product Comparison

Part Number BUZ73HXKSA1
BUZ73HXKSA1
BUZ73AHXKSA1
BUZ73AHXKSA1
BUZ76A
BUZ76A
BUZ76
BUZ76
ManufacturerInfineon TechnologiesInfineon TechnologiesHarris CorporationHarris Corporation
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)40W (Tc)40W (Tc)40W (Tc)40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 25 V530 pF @ 25 V500 pF @ 25 V650 pF @ 25 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs (Max)±20V±20V±20V±20V
Supplier Device PackagePG-TO220-3PG-TO220-3-1TO-220-3TO-220AB
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Drain to Source Voltage (Vdss)200 V200 V400 V400 V
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTubeBulkBulkBulk
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V600mOhm @ 4.5A, 10V2.5Ohm @ 1.5A, 10V1.8Ohm @ 2A, 10V
SeriesSIPMOS®SIPMOS®--
Vgs(th) (Max) @ Id4V @ 1mA4V @ 1mA4V @ 1mA4V @ 1mA
Current - Continuous Drain (Id) @ 25°C7A (Tc)5.5A (Tc)2.6A (Tc)3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V

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