BUZ73AE3046

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:BUZ73AE3046
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-BUZ73AE3046
Part Status3503 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:SIPMOS®
Rds On (Max) @ Id, Vgs:600mOhm @ 4.5A, 10V
Power Dissipation (Max):40W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)

In stock: 3503 pcs

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Product Comparison

Part Number BUZ73AE3046
BUZ73AE3046
BUZ73
BUZ73
BUZ73A
BUZ73A
BUZ73AHXKSA1
BUZ73AHXKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)40W (Tc)40W (Tc)40W (Tc)40W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±20V±20V±20V
Supplier Device PackagePG-TO220-3-1PG-TO220-3PG-TO220-3PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)7A (Tc)5.5A (Tc)5.5A (Tc)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 25 V530 pF @ 25 V530 pF @ 25 V530 pF @ 25 V
Drain to Source Voltage (Vdss)200 V200 V200 V200 V
Vgs(th) (Max) @ Id4V @ 1mA4V @ 1mA4V @ 1mA4V @ 1mA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
SeriesSIPMOS®SIPMOS®SIPMOS®SIPMOS®
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
FET Feature----
PackageBulkTubeTubeBulk
Rds On (Max) @ Id, Vgs600mOhm @ 4.5A, 10V400mOhm @ 4.5A, 10V600mOhm @ 4.5A, 10V600mOhm @ 4.5A, 10V

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