BUK7E1R9-40E,127

MOSFET N-CH 40V 120A I2PAK

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Part Number:BUK7E1R9-40E,127
Manufacturer:Nexperia
Description:MOSFET N-CH 40V 120A I2PAK
RoHs Status:
Nkesp Part Number:73D-BUK7E1R9-40E,127
Part Status4376 pcs
Manufacturer:Nexperia
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Series:Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
Power Dissipation (Max):324W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
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In stock: 4376 pcs

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Product Comparison

Part Number BUK7E1R9-40E,127
BUK7E1R9-40E,127
BUK7E2R3-40E,127-NXP
BUK7E2R3-40E,127-NXP
BUK7E2R3-40E,127
BUK7E2R3-40E,127
BUK7E13-60E,127
BUK7E13-60E,127
ManufacturerNexperia USA Inc.NXP USA Inc.NXP SemiconductorsNexperia USA Inc.
Power Dissipation (Max)324W (Tc)293W (Tc)293W (Tc)96W (Tc)
SeriesAutomotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs1.9mOhm @ 25A, 10V2.3mOhm @ 25A, 10V2.3mOhm @ 25A, 10V13mOhm @ 15A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackageI2PAKI2PAKI2PAKI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drain to Source Voltage (Vdss)40 V40 V40 V60 V
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
PackageTubeTubeBulkTube
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)120A (Tc)120A (Tc)58A (Tc)
Input Capacitance (Ciss) (Max) @ Vds9700 pF @ 25 V8500 pF @ 25 V8500 pF @ 25 V1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V109.2 nC @ 10 V109.2 nC @ 10 V22.9 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 1mA4V @ 1mA4V @ 1mA4V @ 1mA
FET Feature----
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)

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