BUK7E07-55B,127

MOSFET N-CH 55V 75A I2PAK

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Part Number:BUK7E07-55B,127
Manufacturer:NXP USA Inc.
Description:MOSFET N-CH 55V 75A I2PAK
RoHs Status:
Nkesp Part Number:73D-BUK7E07-55B,127
Part Status3347 pcs
Manufacturer:NXP USA Inc.
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Series:TrenchMOS™
Rds On (Max) @ Id, Vgs:7.1mOhm @ 25A, 10V
Power Dissipation (Max):203W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:3760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Base Product Number:BUK7
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In stock: 3347 pcs

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Product Comparison

Part Number BUK7E07-55B,127
BUK7E07-55B,127
BUK7E13-60E,127
BUK7E13-60E,127
BUK7E1R6-30E,127
BUK7E1R6-30E,127
BUK7C3R1-80EJ
BUK7C3R1-80EJ
ManufacturerNXP USA Inc.Nexperia USA Inc.NXP Semiconductors / FreescaleNXP Semiconductors / Freescale
Vgs (Max)±20V±20V±20V-
SeriesTrenchMOS™Automotive, AEC-Q101, TrenchMOS™TrenchMOS™-
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V22.9 nC @ 10 V154nC @ 10V-
Rds On (Max) @ Id, Vgs7.1mOhm @ 25A, 10V13mOhm @ 15A, 10V1.6 mOhm @ 25A, 10V-
Drive Voltage (Max Rds On, Min Rds On)10V10V10V-
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Base Product NumberBUK7---
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)203W (Tc)96W (Tc)349W (Tc)-
Current - Continuous Drain (Id) @ 25°C75A (Tc)58A (Tc)120A (Tc)-
Supplier Device PackageI2PAKI2PAKI2PAKD2PAK (7-Lead)
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Vgs(th) (Max) @ Id4V @ 1mA4V @ 1mA4V @ 1mA-
PackageTubeTube--
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds3760 pF @ 25 V1730 pF @ 25 V11960pF @ 25V-
FET Feature----
Drain to Source Voltage (Vdss)55 V60 V30V80V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-

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