BUK6610-75C,118

NEXPERIA BUK6610 - N-CHANNEL TRE

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Part Number:BUK6610-75C,118
Manufacturer:Freescale / NXP Semiconductors
Description:NEXPERIA BUK6610 - N-CHANNEL TRE
Nkesp Part Number:73D-BUK6610-75C,118
Part Status36458 pcs
Manufacturer:Freescale / NXP Semiconductors
Vgs(th) (Max) @ Id:2.8V @ 1mA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Power Dissipation (Max):158W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5251 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:78A (Tc)

In stock: 36458 pcs

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Product Comparison

Part Number BUK6610-75C,118
BUK6610-75C,118
BUK662R5-30C,118-NXP
BUK662R5-30C,118-NXP
BUK661R6-30C118
BUK661R6-30C118
BUK6607-55C,118
BUK6607-55C,118
ManufacturerNXP SemiconductorsNXP USA Inc.NXP USA Inc.NXP USA Inc.
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageD2PAKD2PAKD2PAKD2PAK
PackageBulkBulkBulkBulk
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V114 nC @ 10 V229 nC @ 10 V82 nC @ 10 V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature----
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Vgs (Max)±16V±16V±16V±16V
Current - Continuous Drain (Id) @ 25°C78A (Tc)100A (Tc)120A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V2.8mOhm @ 25A, 10V1.6mOhm @ 25A, 10V6.5mOhm @ 25A, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)75 V30 V30 V55 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds5251 pF @ 25 V6960 pF @ 25 V14964 pF @ 25 V5160 pF @ 25 V
Vgs(th) (Max) @ Id2.8V @ 1mA2.8V @ 1mA2.8V @ 1mA2.8V @ 1mA
Power Dissipation (Max)158W (Tc)204W (Tc)306W (Tc)158W (Tc)
SeriesAutomotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™

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