BUK652R0-30C,127

MOSFET N-CH 30V 120A TO220AB

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Part Number:BUK652R0-30C,127
Manufacturer:Freescale / NXP Semiconductors
Description:MOSFET N-CH 30V 120A TO220AB
RoHs Status:
Nkesp Part Number:73D-BUK652R0-30C,127
Part Status3687 pcs
Manufacturer:Freescale / NXP Semiconductors
Vgs(th) (Max) @ Id:2.8V @ 1mA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:TrenchMOS™
Rds On (Max) @ Id, Vgs:2.2mOhm @ 25A, 10V
Power Dissipation (Max):306W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:14964 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:229 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Base Product Number:BUK65
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In stock: 3687 pcs

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Product Comparison

Part Number BUK652R0-30C,127
BUK652R0-30C,127
BUK625R2-30C,118
BUK625R2-30C,118
BUK624R5-30C,118
BUK624R5-30C,118
BUK6507-75C,127
BUK6507-75C,127
ManufacturerNXP USA Inc.Nexperia USA Inc.Nexperia USA Inc.NXP USA Inc.
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
PackageTubeTape & Reel (TR)Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)30 V30 V30 V75 V
Supplier Device PackageTO-220ABDPAKDPAKTO-220AB
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs229 nC @ 10 V54.8 nC @ 10 V78 nC @ 10 V123 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V10V4.5V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)90A (Tc)90A (Tc)100A (Tc)
Base Product NumberBUK65---
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Package / CaseTO-220-3TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3
Rds On (Max) @ Id, Vgs2.2mOhm @ 25A, 10V5.2mOhm @ 15A, 10V4.5mOhm @ 25A, 10V7.6mOhm @ 25A, 10V
Vgs (Max)±16V±16V±16V±16V
SeriesTrenchMOS™Automotive, AEC-Q101, TrenchMOS™Automotive, AEC-Q101, TrenchMOS™TrenchMOS™
Vgs(th) (Max) @ Id2.8V @ 1mA2.8V @ 1mA2.8V @ 1mA2.8V @ 1mA
Power Dissipation (Max)306W (Tc)128W (Tc)158W (Tc)204W (Tc)
Input Capacitance (Ciss) (Max) @ Vds14964 pF @ 25 V3470 pF @ 25 V4707 pF @ 25 V7600 pF @ 25 V
Mounting TypeThrough HoleSurface MountSurface MountThrough Hole

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