BTS282ZE3180AATMA2

MOSFET N-CH 49V 80A TO263-7

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Part Number:BTS282ZE3180AATMA2
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 49V 80A TO263-7
RoHs Status:
Nkesp Part Number:73D-BTS282ZE3180AATMA2
Part Status5844 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 240µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7-1
Series:TEMPFET®
Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package:Tape & Reel (TR)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
FET Type:N-Channel
FET Feature:Temperature Sensing Diode
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):49 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:BTS282
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In stock: 5844 pcs

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Product Comparison

Part Number BTS282ZE3180AATMA2
BTS282ZE3180AATMA2
BTS282ZDELCO
BTS282ZDELCO
BTS282ZE3180ANTMA1
BTS282ZE3180ANTMA1
BTS247ZE3062AATMA1
BTS247ZE3062AATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drain to Source Voltage (Vdss)49 V49 V49 V55 V
FET FeatureTemperature Sensing Diode---
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-220-7 Formed LeadsTO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V6.5mOhm @ 36A, 10V6.5mOhm @ 36A, 10V18mOhm @ 12A, 10V
Operating Temperature-40°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
SeriesTEMPFET®TEMPFET®TEMPFET®TEMPFET®
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V4800 pF @ 25 V4800 pF @ 25 V1950 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)33A (Tc)
Base Product NumberBTS282---
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)BulkBulkBulk
Vgs (Max)±20V±20V±20V±20V
Supplier Device PackagePG-TO263-7-1P-TO220-7-3PG-TO263-7-1PG-TO263-5-2
Vgs(th) (Max) @ Id2V @ 240µA2V @ 240µA2V @ 240µA2V @ 90µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs232 nC @ 10 V232 nC @ 10 V232 nC @ 10 V90 nC @ 10 V
Power Dissipation (Max)300W (Tc)300W (Tc)300W (Tc)120W (Tc)
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount

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