BSZ088N03LSGATMA1

MOSFET N-CH 30V 12A/40A 8TSDSON

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Specifications
Part Number:BSZ088N03LSGATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 12A/40A 8TSDSON
RoHs Status:
Nkesp Part Number:73D-BSZ088N03LSGATMA1
Part Status49291 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TSDSON-8
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:8.8mOhm @ 20A, 10V
Power Dissipation (Max):2.1W (Ta), 35W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 40A (Tc)
Base Product Number:BSZ088
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In stock: 49291 pcs

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Data sheet

Product Comparison

Part Number BSZ088N03LSGATMA1
BSZ088N03LSGATMA1
BSZ086P03NS3EGATMA1
BSZ086P03NS3EGATMA1
BSZ0803LSATMA1
BSZ0803LSATMA1
BSZ0902NSATMA1
BSZ0902NSATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Vgs(th) (Max) @ Id2.2V @ 250µA3.1V @ 105µA2.3V @ 23µA2V @ 250µA
Current - Continuous Drain (Id) @ 25°C12A (Ta), 40A (Tc)13.5A (Ta), 40A (Tc)9A (Ta), 40A (Tc)19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs8.8mOhm @ 20A, 10V8.6mOhm @ 20A, 10V14.6mOhm @ 20A, 10V2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 15 V4785 pF @ 15 V1300 pF @ 50 V1700 pF @ 15 V
Supplier Device PackagePG-TSDSON-8PG-TSDSON-8PG-TDSON-8 FLPG-TSDSON-8-FL
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V6V, 10V4.5V, 10V4.5V, 10V
Base Product NumberBSZ088BSZ086BSZ0803BSZ0902
Vgs (Max)±20V±25V±20V±20V
Drain to Source Voltage (Vdss)30 V30 V100 V30 V
Power Dissipation (Max)2.1W (Ta), 35W (Tc)2.1W (Ta), 69W (Tc)2.1W (Ta), 52W (Tc)2.1W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V57.5 nC @ 10 V15 nC @ 10 V26 nC @ 10 V
SeriesOptiMOS™OptiMOS™OptiMOS™ 5OptiMOS™
FET TypeN-ChannelP-ChannelN-ChannelN-Channel
FET Feature----

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