BSS139IXTSA1

SMALL SIGNAL MOSFETS PG-SOT23-3

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Specifications
Part Number:BSS139IXTSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:SMALL SIGNAL MOSFETS PG-SOT23-3
RoHs Status:
Nkesp Part Number:73D-BSS139IXTSA1
Part Status125398 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1V @ 56µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-SOT-23-3
Series:-
Rds On (Max) @ Id, Vgs:14Ohm @ 100mA, 10V
Power Dissipation (Max):360mW (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)

In stock: 125398 pcs

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Product Comparison

Part Number BSS139IXTSA1
BSS139IXTSA1
BSS159NH6906XTSA1
BSS159NH6906XTSA1
BSS159NL6906
BSS159NL6906
BSS138_L99Z
BSS138_L99Z
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon Technologiesonsemi
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)360mW (Ta)360mW (Ta)360mW (Ta)360mW (Ta)
Drain to Source Voltage (Vdss)250 V60 V60 V50 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 5 V2.9 nC @ 5 V1.4 nC @ 5 V2.4 nC @ 10 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackagePG-SOT-23-3PG-SOT23PG-SOT23-3-5SOT-23-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs14Ohm @ 100mA, 10V3.5Ohm @ 160mA, 10V3.5Ohm @ 160mA, 10V3.5Ohm @ 220mA, 10V
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C100mA (Ta)230mA (Ta)230mA (Ta)220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V0V, 10V0V, 10V4.5V, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)±20V±20V±20V±20V
Series-SIPMOS®SIPMOS®-
FET Feature-Depletion ModeDepletion Mode-
PackageTape & Reel (TR)Tape & Reel (TR)BulkTape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V44 pF @ 25 V39 pF @ 25 V27 pF @ 25 V
Vgs(th) (Max) @ Id1V @ 56µA2.4V @ 26µA2.4V @ 26µA1.5V @ 1mA

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