BSS123 E6433

MOSFET N-CH 100V 170MA SOT23-3

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Part Number:BSS123 E6433
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 100V 170MA SOT23-3
Nkesp Part Number:73D-BSS123 E6433
Part Status3824 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1.8V @ 50µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-SOT23
Series:SIPMOS®
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Power Dissipation (Max):360mW (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
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In stock: 3824 pcs

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Product Comparison

Part Number BSS123 E6433
BSS123 E6433
BSS119L6433
BSS119L6433
BSS123-7-F
BSS123-7-F
BSS123
BSS123
ManufacturerInfineon TechnologiesInfineon TechnologiesDiodes IncorporatedYangjie Technology
PackageTape & Reel (TR)BulkTape & Reel (TR)Tape & Reel (TR)
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackagePG-SOT23PG-SOT23SOT-23-3SOT-23
Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V6Ohm @ 170mA, 10V6Ohm @ 170mA, 10V6Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C170mA (Ta)170mA (Ta)170mA (Ta)170mA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V10V4.5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Vgs(th) (Max) @ Id1.8V @ 50µA2.3V @ 50µA2V @ 1mA2.8V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds69 pF @ 25 V78 pF @ 25 V60 pF @ 25 V60 pF @ 25 V
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
SeriesSIPMOS®SIPMOS®--
Power Dissipation (Max)360mW (Ta)360mW (Ta)300mW (Ta)350mW
Gate Charge (Qg) (Max) @ Vgs2.67 nC @ 10 V2.5 nC @ 10 V-2 nC @ 10 V
Drain to Source Voltage (Vdss)100 V100 V100 V100 V

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