In stock: 4615 pcs
Part Number |
BSP613P
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BSP88L6327
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BSP612PH6327XTSA1
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BSP372L6327HTSA1
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Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) | 350mA (Ta) | 3A (Ta) | 1.7A (Ta) | |
FET Type | P-Channel | N-Channel | - | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V | 95 pF @ 25 V | - | 520 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 6.8 nC @ 10 V | - | - | |
Supplier Device Package | PG-SOT223-4-21 | PG-SOT223-4-21 | - | PG-SOT223-4 | |
FET Feature | - | - | - | - | |
Vgs (Max) | ±20V | ±20V | - | ±14V | |
Drain to Source Voltage (Vdss) | 60 V | 240 V | - | 100 V | |
Mounting Type | Surface Mount | Surface Mount | - | Surface Mount | |
Series | SIPMOS® | SIPMOS® | Automotive, AEC-Q101, OptiMOS™ | SIPMOS® | |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | - | TO-261-4, TO-261AA | |
Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | - | 1.8W (Ta) | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 2.8V, 10V | - | 5V | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | |
Package | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 2.9A, 10V | 6Ohm @ 350mA, 10V | - | 310mOhm @ 1.7A, 5V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | 1.4V @ 108µA | - | 2V @ 1mA |
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