BSL302SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

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RFQ
Specifications
Part Number:BSL302SNL6327
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:SMALL SIGNAL N-CHANNEL MOSFET
RoHs Status:
Nkesp Part Number:73D-BSL302SNL6327
Part Status4109 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 30µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TSOP6-6-6
Series:OptiMOS™ 2
Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 10V
Power Dissipation (Max):2W (Ta)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.1A (Ta)

In stock: 4109 pcs

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Product Comparison

Part Number BSL302SNL6327
BSL302SNL6327
BSL302SNH6327XTSA1
BSL302SNH6327XTSA1
BSL211SPT
BSL211SPT
BSL307SPT
BSL307SPT
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Vgs(th) (Max) @ Id2V @ 30µA2V @ 30µA1.2V @ 25µA2V @ 40µA
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 10V25mOhm @ 7.1A, 10V67mOhm @ 4.7A, 4.5V43mOhm @ 5.5A, 10V
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V2.5V, 4.5V4.5V, 10V
Power Dissipation (Max)2W (Ta)2W (Ta)2W (Ta)2W (Ta)
Vgs (Max)±20V±20V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 15 V750 pF @ 15 V654 pF @ 15 V805 pF @ 25 V
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET TypeN-ChannelN-ChannelP-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C7.1A (Ta)7.1A (Ta)4.7A (Ta)5.5A (Ta)
Drain to Source Voltage (Vdss)30 V30 V20 V30 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesOptiMOS™ 2OptiMOS™OptiMOS™OptiMOS™
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 5 V6.6 nC @ 5 V12.4 nC @ 4.5 V29 nC @ 10 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device PackagePG-TSOP6-6-6PG-TSOP6-6PG-TSOP6-6PG-TSOP6-6

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