BSH105,235

MOSFET N-CH 20V 1.05A TO236AB

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Part Number:BSH105,235
Manufacturer:Nexperia
Description:MOSFET N-CH 20V 1.05A TO236AB
RoHs Status:
Nkesp Part Number:73D-BSH105,235
Part Status196369 pcs
Manufacturer:Nexperia
Vgs(th) (Max) @ Id:570mV @ 1mA (Typ)
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-236AB
Series:-
Rds On (Max) @ Id, Vgs:200mOhm @ 600mA, 4.5V
Power Dissipation (Max):417mW (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:152 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.05A (Ta)
Base Product Number:BSH105
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In stock: 196369 pcs

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Data sheet

Product Comparison

Part Number BSH105,235
BSH105,235
BSH202,215
BSH202,215
BSH205,215
BSH205,215
BSH205G2
BSH205G2
ManufacturerNexperia USA Inc.Nexperia USA Inc.NXP USA Inc.Nexperia USA Inc.
Vgs(th) (Max) @ Id570mV @ 1mA (Typ)1.9V @ 1mA680mV @ 1mA (Typ)-
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 4.5 V2.9 nC @ 10 V3.8 nC @ 4.5 V-
FET Feature----
Rds On (Max) @ Id, Vgs200mOhm @ 600mA, 4.5V900mOhm @ 280mA, 10V400mOhm @ 430mA, 4.5V-
Base Product NumberBSH105BSH202BSH205-
Series---*
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V4.5V, 10V1.8V, 4.5V-
Vgs (Max)±8V±20V±8V-
Supplier Device PackageTO-236ABTO-236ABSOT-23 (TO-236AB)-
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Input Capacitance (Ciss) (Max) @ Vds152 pF @ 16 V80 pF @ 24 V200 pF @ 9.6 V-
Drain to Source Voltage (Vdss)20 V30 V12 V-
Mounting TypeSurface MountSurface MountSurface Mount-
Current - Continuous Drain (Id) @ 25°C1.05A (Ta)520mA (Ta)750mA (Ta)-
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Power Dissipation (Max)417mW (Ta)417mW (Ta)417mW (Ta)-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
FET TypeN-ChannelP-ChannelP-Channel-

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