BSC16DN25NS3GATMA1

MOSFET N-CH 250V 10.9A TDSON-8-5

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Specifications
Part Number:BSC16DN25NS3GATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 250V 10.9A TDSON-8-5
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-BSC16DN25NS3GATMA1
Part Status23507 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 32µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TDSON-8-5
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:165mOhm @ 5.5A, 10V
Power Dissipation (Max):62.5W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:10.9A (Tc)
Base Product Number:BSC16DN25
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In stock: 23507 pcs

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Supplier Device Package----
Technology----
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Rds On (Max) @ Id, Vgs----
Gate Charge (Qg) (Max) @ Vgs----
Base Product Number----
Series-***
Operating Temperature----
Package / Case----
Drain to Source Voltage (Vdss)----
Drive Voltage (Max Rds On, Min Rds On)----
Input Capacitance (Ciss) (Max) @ Vds----
Mounting Type----
Current - Continuous Drain (Id) @ 25°C----
Power Dissipation (Max)----
Vgs (Max)----

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