BSC016N06NSTATMA1

MOSFET N-CH 60V 31A/100A TDSON

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Specifications
Part Number:BSC016N06NSTATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 60V 31A/100A TDSON
RoHs Status:
Nkesp Part Number:73D-BSC016N06NSTATMA1
Part Status14784 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.3V @ 95µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TDSON-8 FL
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
Power Dissipation (Max):3W (Ta), 167W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 100A (Tc)
Base Product Number:BSC016
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In stock: 14784 pcs

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Product Comparison

Part Number BSC016N06NSTATMA1
BSC016N06NSTATMA1
BSC018NE2LSIATMA1
BSC018NE2LSIATMA1
BSC019N04NSGATMA1
BSC019N04NSGATMA1
BSC018N04LSGATMA1
BSC018N04LSGATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)6V, 10V4.5V, 10V10V4.5V, 10V
Vgs(th) (Max) @ Id3.3V @ 95µA2V @ 250µA4V @ 85µA2V @ 85µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
Base Product NumberBSC016BSC018BSC019BSC018
Current - Continuous Drain (Id) @ 25°C31A (Ta), 100A (Tc)29A (Ta), 100A (Tc)30A (Ta), 100A (Tc)30A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss)60 V25 V40 V40 V
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power Dissipation (Max)3W (Ta), 167W (Tc)2.5W (Ta), 69W (Tc)2.5W (Ta), 125W (Tc)2.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)±20V±20V±20V±20V
Rds On (Max) @ Id, Vgs1.6mOhm @ 50A, 10V1.8mOhm @ 30A, 10V1.9mOhm @ 50A, 10V1.8mOhm @ 50A, 10V
Supplier Device PackagePG-TDSON-8 FLPG-TDSON-8-6PG-TDSON-8-1PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V36 nC @ 10 V108 nC @ 10 V150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 30 V2500 pF @ 12 V8800 pF @ 20 V12000 pF @ 20 V
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™

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