AUIRF9Z34N

AUTOMOTIVE HEXFET P CHANNEL

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RFQ
Specifications
Part Number:AUIRF9Z34N
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:AUTOMOTIVE HEXFET P CHANNEL
RoHs Status:
Nkesp Part Number:73D-AUIRF9Z34N
Part Status24160 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:Automotive, AEC-Q101, HEXFET®
Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)

In stock: 24160 pcs

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International Rectifier
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Product Comparison

Part Number AUIRF9Z34N
AUIRF9Z34N
AUIRFB3806-IR
AUIRFB3806-IR
AUIRF7805QTR
AUIRF7805QTR
AUIRFB8405-071
AUIRFB8405-071
ManufacturerInternational RectifierInternational RectifierInfineon TechnologiesInternational Rectifier
Supplier Device PackageTO-220ABTO-220AB8-SO-
PackageBulkBulkTape & Reel (TR)Bulk
Current - Continuous Drain (Id) @ 25°C19A (Tc)43A (Tc)13A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)10V-4.5V-
Operating Temperature-55°C ~ 175°C (TJ)--55°C ~ 150°C (TJ)-
Vgs (Max)±20V-±12V-
Drain to Source Voltage (Vdss)55 V60 V30 V-
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V-31 nC @ 5 V-
Mounting TypeThrough HoleThrough HoleSurface Mount-
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V---
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
FET Feature----
Power Dissipation (Max)68W (Tc)71W (Tc)2.5W (Ta)-
FET TypeP-ChannelN-ChannelN-Channel-
SeriesAutomotive, AEC-Q101, HEXFET®HEXFET®HEXFET®*
Package / CaseTO-220-3TO-220-38-SOIC (0.154", 3.90mm Width)-
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 10V15.8mOhm @ 43A, 10V11mOhm @ 7A, 4.5V-
Vgs(th) (Max) @ Id4V @ 250µA-3V @ 250µA-

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