AUIRF5210S

MOSFET P-CH 100V 38A D2PAK

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Specifications
Part Number:AUIRF5210S
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET P-CH 100V 38A D2PAK
RoHs Status:
Nkesp Part Number:73D-AUIRF5210S
Part Status3637 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
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In stock: 3637 pcs

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Product Comparison

Part Number AUIRF5210S
AUIRF5210S
AUIRF6215S
AUIRF6215S
AUIRF6215
AUIRF6215
AUIRF540ZSTRL
AUIRF540ZSTRL
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Current - Continuous Drain (Id) @ 25°C38A (Tc)13A (Tc)13A (Tc)36A (Tc)
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V66 nC @ 10 V66 nC @ 10 V63 nC @ 10 V
FET TypeP-ChannelP-ChannelP-ChannelN-Channel
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Drain to Source Voltage (Vdss)100 V150 V150 V100 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Supplier Device PackageD2PAKD2PAKTO-220ABPG-TO263-3
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs60mOhm @ 38A, 10V290mOhm @ 6.6A, 10V290mOhm @ 6.6A, 10V26.5mOhm @ 22A, 10V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 25 V860 pF @ 25 V860 pF @ 25 V1770 pF @ 25 V
Power Dissipation (Max)3.1W (Ta), 170W (Tc)3.8W (Ta), 110W (Tc)110W (Tc)92W (Tc)
Vgs (Max)±20V±20V±20V±20V
PackageTubeTubeTubeTape & Reel (TR)

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