AUIRF4905

AUIRF4905 - 20V-150V P-CHANNEL A

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Specifications
Part Number:AUIRF4905
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:AUIRF4905 - 20V-150V P-CHANNEL A
Nkesp Part Number:73D-AUIRF4905
Part Status4558 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:20mOhm @ 38A, 10V
Power Dissipation (Max):200W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)

In stock: 4558 pcs

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International Rectifier
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Product Comparison

Part Number AUIRF4905
AUIRF4905
AUIRF5210S
AUIRF5210S
AUIRF6215
AUIRF6215
AUIRF4905STRL
AUIRF4905STRL
ManufacturerInternational RectifierInfineon TechnologiesInfineon TechnologiesInfineon Technologies
SeriesHEXFET®HEXFET®HEXFET®Automotive, AEC-Q101, HEXFET®
Mounting TypeThrough HoleSurface MountThrough HoleSurface Mount
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Supplier Device PackageTO-220ABD2PAKTO-220ABPG-TO263-3
Package / CaseTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)200W (Tc)3.1W (Ta), 170W (Tc)110W (Tc)200W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
PackageBulkTubeTubeTape & Reel (TR)
Rds On (Max) @ Id, Vgs20mOhm @ 38A, 10V60mOhm @ 38A, 10V290mOhm @ 6.6A, 10V20mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C74A (Tc)38A (Tc)13A (Tc)42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V2780 pF @ 25 V860 pF @ 25 V3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V230 nC @ 10 V66 nC @ 10 V180 nC @ 10 V
Vgs (Max)±20V±20V±20V±20V
FET Feature----
Drain to Source Voltage (Vdss)55 V100 V150 V55 V

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