AS2M040120P

N-CHANNEL SILICON CARBIDE POWER

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Specifications
Part Number:AS2M040120P
Manufacturer:ANBON SEMICONDUCTOR (INT'L) LIMITED
Description:N-CHANNEL SILICON CARBIDE POWER
RoHs Status:
Nkesp Part Number:73D-AS2M040120P
Part Status2009 pcs
Manufacturer:ANBON SEMICONDUCTOR (INT'L) LIMITED
Vgs(th) (Max) @ Id:4V @ 10mA
Vgs (Max):+25V, -10V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247-3
Series:-
Rds On (Max) @ Id, Vgs:55mOhm @ 40A, 20V
Power Dissipation (Max):330W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2946 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs:142 nC @ 20 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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In stock: 2009 pcs

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Data sheet

Product Comparison

Part Number AS2M040120P
AS2M040120P
NVTFS4C08NTAG
NVTFS4C08NTAG
2N7002K,215
2N7002K,215
AON7242
AON7242
ManufacturerANBON SEMICONDUCTOR (INT'L) LIMITEDonsemiNXP USA Inc.Alpha & Omega Semiconductor Inc.
Package / CaseTO-247-38-PowerWDFNTO-236-3, SC-59, SOT-23-38-PowerWDFN
Current - Continuous Drain (Id) @ 25°C60A (Tc)17A (Ta)340mA (Ta)30A (Ta), 50A (Tc)
TechnologySiCFET (Silicon Carbide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id4V @ 10mA2.2V @ 250µA2V @ 1mA2.3V @ 250µA
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V5.9mOhm @ 30A, 10V3.9Ohm @ 500mA, 10V3.9mOhm @ 20A, 10V
Power Dissipation (Max)330W (Tc)3.1W (Ta), 31W (Tc)830mW (Ta)6.2W (Ta), 83W (Tc)
PackageTubeTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET Feature----
Vgs (Max)+25V, -10V±20V±15V±20V
Input Capacitance (Ciss) (Max) @ Vds2946 pF @ 1000 V1113 pF @ 15 V40 pF @ 10 V2365 pF @ 20 V
Drain to Source Voltage (Vdss)1200 V30 V60 V40 V
Drive Voltage (Max Rds On, Min Rds On)20V4.5V, 10V4.5V, 10V4.5V, 10V
Supplier Device PackageTO-247-38-WDFN (3.3x3.3)SOT-23 (TO-236AB)8-DFN-EP (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs142 nC @ 20 V18.2 nC @ 10 V-32 nC @ 10 V
Series-Automotive, AEC-Q101TrenchMOS™-

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