APTM20DHM10G

MOSFET 2N-CH 200V 175A SP6

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Specifications
Part Number:APTM20DHM10G
Manufacturer:Microsemi
Description:MOSFET 2N-CH 200V 175A SP6
Nkesp Part Number:73D-APTM20DHM10G
Part Status3156 pcs
Manufacturer:Microsemi
Vgs(th) (Max) @ Id:5V @ 5mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP6
Series:-
Rds On (Max) @ Id, Vgs:12mOhm @ 87.5A, 10V
Power - Max:694W
Package / Case:SP6
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:13700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:224nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):200V
Current - Continuous Drain (Id) @ 25°C:175A
Configuration:2 N-Channel (Dual) Asymmetrical
Base Product Number:APTM20
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In stock: 3156 pcs

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Data sheet

Product Comparison

Part Number APTM20DHM10G
APTM20DHM10G
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APTM20HM10FG
APTM20AM08FTG
APTM20AM08FTG
APTM20AM05FTG
APTM20AM05FTG
ManufacturerMicrosemi CorporationMicrochip TechnologyMicrochip TechnologyMicrosemi Corporation
Drain to Source Voltage (Vdss)200V200V200V200V
Base Product NumberAPTM20APTM20APTM20APTM20
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Series----
Gate Charge (Qg) (Max) @ Vgs224nC @ 10V224nC @ 10V280nC @ 10V1184nC @ 10V
Rds On (Max) @ Id, Vgs12mOhm @ 87.5A, 10V12mOhm @ 87.5A, 10V10mOhm @ 104A, 10V5mOhm @ 166.5A, 10V
Configuration2 N-Channel (Dual) Asymmetrical4 N-Channel (Half Bridge)2 N-Channel (Half Bridge)2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds13700pF @ 25V13700pF @ 25V14400pF @ 25V40800pF @ 25V
Package / CaseSP6SP6SP4SP4
Supplier Device PackageSP6SP6SP4SP4
FET Feature----
Power - Max694W694W781W1250W
Vgs(th) (Max) @ Id5V @ 5mA5V @ 5mA5V @ 5mA4V @ 8mA
Current - Continuous Drain (Id) @ 25°C175A175A208A333A
PackageBulkBulkBulkBulk
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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